Typical Characteristics
15
2
12
V GS = -10V
-6.0V
V
-5.0V
-4.5V
1.8
V GS = -3.5V
1.6
9
-4.0V
1.4
-4.0V
6
-3.5V
1.2
1
-4.5V
-5.0V
-6.0V
3
-3.0V
0.8
0.6
-7.0V
-10V
0
0.4
0
1
2
3
4
5
0
3
6
9
12
15
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I D = -3.6A
V GS = -10V
1.4
1.2
1
0.8
0.6
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
I D = -1.8A
0.25
0.2
T A = 125 o C
0.15
0.1
T A = 25 o C
0.05
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C)
10
o
Figure 3. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V DS = -5.0V
T A = -55 o C
25 o C
V GS = 0V
8
6
125 o C
1
0.1
T A = 125 o C
25 o C
4
2
0
0.01
0.001
0.0001
-55 o C
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC654P Rev E1(W)
相关PDF资料
FDC655BN MOSFET N-CH 30V 6.3A SSOT-6
FDC6561AN MOSFET N-CHAN DUAL 30V SSOT6
FDC658AP MOSFET P-CH SGL LL 30V 4A SSOT6
FDC658P MOSFET P-CH 30V 4A SSOT-6
FDC855N MOSFET N-CH 30V 6.1A 6-SSOT
FDC8601 MOSFET N-CH 100V TRENCH SSOT-6
FDC8602 MOSFET N-CH DUAL 100V 6-SSOT
FDC86244 MOSFET N-CH 150V 2.3A 6SSOT
相关代理商/技术参数
FDC654P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC654P_G 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free)
FDC654P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC654P Series 30 V 75 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC655AN 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC655AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
FDC655AN_F095 功能描述:MOSFET 30V 6.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC655BN 功能描述:MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC655BN 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA